Discovery may boost memory technology
Houston TX (SPX) Aug 14, 2015
Scientists at Rice University have created a solid-state memory technology that allows for high-density storage with a minimum incidence of computer errors.
The memories are based on tantalum oxide, a common insulator in electronics. Applying voltage to a 250-nanometer-thick sandwich of graphene, tantalum, nanoporous tantalum oxide and platinum creates addressable bits where the layers mee —> Read More